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Data Sheet HIGH VOLTAGE POWER SCHOTTKY RECTIFIER General Description
High voltage dual Schottky rectifier suited for switch mode power supplies and other power converters. This device is intended for use in medium voltage operation, and particularly, in high frequency circuits where low switching losses and low noise are required. MBR20H100C is available in TO-220-3, TO-220-3(2) and TO-220F-3 packages
MBR20H100C
Main Product Characteristics
IF(AV) VRRM TJ VF(max) 2*10A 100V 175oC 0.64V
Mechanical Characteristics Features
* * * * * * Low Forward Voltage: 0.64V @125oC High Surge Capacity 175oC Operating Junction Temperature 20 A Total (10A Each Diode Leg) Guard-Ring for Stress Protection Pb-Free Package * * * Case: Epoxy, Molded Epoxy Meets UL 94 V-0 @ 0.125 in Weight (Approximately): 2 Grams (TO-220-3, TO-220-3(2) and TO-220F-3) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260oC Maximum for 10 Seconds
* * *
Applications
* * * Power Supply Output Rectification Power Management Instrumentation
TO-220F-3
TO-220-3
TO-220-3(2)
Figure 1. Package Type of MBR20H100C
Apr. 2009 Rev. 1. 2 1
BCD Semiconductor Manufacturing Limited
Data Sheet HIGH VOLTAGE POWER SCHOTTKY RECTIFIER Pin Configuration
T Package (TO-220-3) (TO-220-3(2))
MBR20H100C
3
2
A2 K A1
3 2 1
A2 K A1
1
TF Package (TO-220F-3)
3 2 1
A2 K A1
Figure 2. Pin Configuration of MBR20H100C(front view)
A1 K A2
Figure 3. Internal Structure of MBR20H100C
Apr. 2009 Rev. 1. 2 2
BCD Semiconductor Manufacturing Limited
Data Sheet HIGH VOLTAGE POWER SCHOTTKY RECTIFIER Ordering Information MBR20H100C
MBR20H100C Circuit Type Package T: TO-220-3/TO-220-3(2) TF: TO220F-3
E1: Lead Free G1: Green Blank: Tube
Package
Part Number Lead Free
Marking ID
Green
MBR20H100CT-G1
Lead Free MBR20H100CT-E1
Green
MBR20H100CT-G1
Packing Type Tube Tube
TO-220-3/ MBR20H100CT-E1 TO-220-3(2) TO-220F-3
MBR20H100CTF-E1 MBR20H100CTF-G1 MBR20H100CTF-E1 MBR20H100CTF-G1
BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Products with "G1" suffix are available in green packages.
Apr. 2009 Rev. 1. 2 3
BCD Semiconductor Manufacturing Limited
Data Sheet HIGH VOLTAGE POWER SCHOTTKY RECTIFIER Absolute Maximum Ratings (Each Diode Leg) (Note 1)
Parameter Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (Rated VR) TC=162oC Symbol VRRM VRWM VR IF(AV) IFRM IFSM TJ TSTG dv/dt Value 100 Unit V
MBR20H100C
10 20 250 175 -65 to 175 10000 >400 >8000
A A A
oC oC
Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz) TC=160oC Non Repetitive Peak Surge Current (Surge applied at rated load conditions half wave, single phase, 60 Hz)
Operating Junction Temperature (Note 2) Storage Temperature Range Voltage Rate of Change (Rated VR) ESD (Machine Model=C) ESD (Human Body Model=3B)
V/s V V
Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods may affect device reliability. Note 2: The heat generated must be less than the thermal conductivity from Junction to Ambient: dPD/dTJ < 1/RJA.
Thermal Characteristics
Parameter Symbol RJC Maximum Thermal Resistance RJA Junction to Ambient Condition Junction to Case TO-220-3/ TO-220-3(2) TO-220F-3 TO-220-3/ TO-220-3(2) Value 2.0 2.5 60
o
Unit
C/W
Apr. 2009 Rev. 1. 2 4
BCD Semiconductor Manufacturing Limited
Data Sheet HIGH VOLTAGE POWER SCHOTTKY RECTIFIER Electrical Characteristics (Each Diode Leg)
Parameter Condition IF=10 A, TC=25oC Maximum Instantaneous Forward IF=10 A, TC=125oC Voltage Drop (Note 3) IF=20 A, TC=25oC IF=20 A, TC=125oC Maximum Instantaneous Reverse Current (Note 3) Rated DC Voltage, TC=125oC Rated DC Voltage, TC=25oC IR 0.0045 VF Symbol Value 0.77 0.64 0.88 0.73 6.0 mA V Unit
MBR20H100C
Note 3: Pulse Test: Pulse Width=300s, Duty Cycle2.0%.
Apr. 2009 Rev. 1. 2 5
BCD Semiconductor Manufacturing Limited
Data Sheet HIGH VOLTAGE POWER SCHOTTKY RECTIFIER Typical Performance Characteristics
100
MBR20H100C
IF, Instantaneous Forward Current (A)
10
1
0.1
25 C o 125 C o 150 C o 175 C
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
o
0.01 0.0
VF, Instantaneous Forward Voltage (V)
Figure 4. Typical Forward Voltage
0.01
1E-3
IR, Reverse Current (A)
1E-4
1E-5
1E-6
25 C o 125 C o 150 C o 175 C
o
1E-7
1E-8
1E-9
20
40
60
80
100
VR, Reverse Voltage (V)
Figure 5. Typical Reverse Current
Apr. 2009 Rev. 1. 2 6
BCD Semiconductor Manufacturing Limited
Data Sheet HIGH VOLTAGE POWER SCHOTTKY RECTIFIER Typical Performance Characteristics (Continued)
10000
MBR20H100C
Capacitance (pF)
1000
TJ=25 C
o
100
10
20
40
60
80
100
VR, Reverse Voltage (V)
Figure 6. Capacitance
14
IAV, Average Foward Current (A)
12
10
8 Square
6
4
2
0 100
110
120
130
140
150
o
160
170
180
Case Temperature ( C)
Figure 7. Average Forward Current vs. Case Temperature (Square, Each Diode)
Apr. 2009 Rev. 1. 2 7
BCD Semiconductor Manufacturing Limited
Data Sheet HIGH VOLTAGE POWER SCHOTTKY RECTIFIER Mechanical Dimensions TO-220-3 Unit: mm(inch) MBR20H100C
9.660(0.380) 10.660(0.420) 3.560(0.140) 4.060(0.160)
2.580(0.102) 3.380(0.133)
0.550(0.022) 1.350(0.053)
1.850(0.073)
0.200(0.008)
14.230(0.560) 16.510(0.650)
7
1.500(0.059)
8.520(0.335) 9.520(0.375)
27.880(1.098) 30.280(1.192)
3.560(0.140) 4.820(0.190) 2.080(0.082) 2.880(0.113)
7
3
1.160(0.046) 1.760(0.069) 60 0.813(0.032)
0.381(0.015)
8.763(0.345)
60
0.381(0.015) 2.540(0.100) 2.540(0.100)
0.356(0.014) 0.406(0.016)
Apr. 2009 Rev. 1. 2 8
BCD Semiconductor Manufacturing Limited
Data Sheet HIGH VOLTAGE POWER SCHOTTKY RECTIFIER Mechanical Dimensions (Continued) TO-220-3(2)
9.800(0.386) 10.200(0.402) 1.700(0.067)
MBR20H100C
Unit: mm(inch)
3.560(0.140)
3.640(0.143)
0.600(0.024)
1.300(0.051)
1.300(0.051) 11.100(0.437) 9.000(0.354) 9.400(0.370) 1.270(0.050) 12.600(0.496) 13.600(0.535) 0.700(0.028) 0.900(0.035) 9.600(0.378) 10.600(0.417) 2.540(0.100) 2.540(0.100)
6.300(0.248) 6.700(0.264)
3
4.500(0.177) 2.400(0.094)
3
3
0.400(0.016) 0.600(0.024)
Apr. 2009 Rev. 1. 2 9
BCD Semiconductor Manufacturing Limited
Data Sheet HIGH VOLTAGE POWER SCHOTTKY RECTIFIER Mechanical Dimensions (Continued) TO-220F-3
9.700(0.382) 10.300(0.406)
MBR20H100C
Unit: mm(inch)
3.000(0.119)
3.550(0.140)
6.900(0.272) 7.100(0.280)
3.000(0.119) 3.400(0.134)
2.350(0.093) 2.900(0.114)
3.370(0.133) 3.900(0.154) 14.700(0.579) 16.000(0.630)
4.300(0.169) 4.900(0.075)
2.790(0.110) 4.500(0.177) 12.500(0.492) 13.500(0.531) 0.550(0.022) 0.900(0.035) 2.540(0.100)
1.000(0.039) 1.400(0.055) 1.100(0.043) 1.500(0.059)
2.540(0.100)
0.450(0.018) 0.600(0.024)
Apr. 2009 Rev. 1. 2 10
BCD Semiconductor Manufacturing Limited
BCD Semiconductor Manufacturing Limited
http://www.bcdsemi.com
IMPORTANT NOTICE IMPORTANT NOTICE BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifiBCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifications herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or other rights nor the rights of others. other rights nor the rights of others.
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